Exfoliated graphene reinforced polybenzimidazole nanocomposites with high dielectric permittivity at low percolation threshold

被引:20
作者
Ahmad, Md Wasi [1 ]
Dey, Baban [2 ]
Sarkhel, Gautam [2 ]
Bag, Dibyendu Sekhar [3 ]
Choudhury, Arup [2 ]
机构
[1] Dhofar Univ, Dept Chem Engn, Coll Engn, POB 2509, Salalah, Oman
[2] Birla Inst Technol, Dept Chem Engn, Ranchi 835215, Bihar, India
[3] Def Mat & Stores Res & Dev Estab, GT Rd, Kanpur 208013, Uttar Pradesh, India
关键词
polybenzimidazole; Exfoliated graphene; Nanocomposites; Morphology; Dielectric properties; ELECTRICAL-PROPERTIES; COMPOSITES; CONSTANT; FABRICATION; STABILITY; FLUORIDE); MATRIX;
D O I
10.1016/j.molstruc.2018.10.009
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The present article reports the dielectric performances of exfoliated graphene (xGnP) reinforced polybenzimidazole (PBI) nanocomposites, which were prepared through in-situ chemical polymerization, using xGnP-methanesulfonic acid solution as a reaction medium. FTIR and X-ray diffraction (XRD) studies confirmed the existence of non-covalent pi-pi stacking interactions between xGnP basal plan and PBI backbone chains. Morphological analysis of nanocomposite by FE-SEM and TEM demonstrated a uniform dispersion of xGnP nanosheets into PBI matrix as well as the formation PSI layer on individual xGnP nanosheet that imparted huge improvement in dielectric permittivity. The PBI nanocomposite with 2.5 wt% xGnP loading exhibits five times enhancement in the dielectric permittivity at low percolation threshold (0.52 vol%) together with low dielectric loss at room temperature. The results could be ascribed to Maxwell-Wagner-Sillars (MWS) effects based on the pi-pi stacking interactions between conjugated PBI chains and xGnP. The dielectric permittivity of the nanocomposite is appeared to be nearly stable up to 200 degrees C followed by small enhancement at higher temperature (up to 300 degrees C), which make this nanocomposite potential candidate for high-performance embedded capacitors. (C) 2018 Published by Elsevier B.V.
引用
收藏
页码:491 / 498
页数:8
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