Correspondence of experimental surface electronic structure of the Si(113)3 x 2 with structure models

The surface electronic structures of the Si(113)3 x 2 surface are studied in detail with angle-resolved photoelectron spectroscopy, Two surface states are observed in the [1(1) over bar 0] direction, A single dangling bond state having a broad line shape and large intensity at about 0.95 eV in normal emission spectrum is separated to two states, S-1 and S-2, at higher emission angles, different from the previous study. The dispersions of two states in the [1(1) over bar 0] direction are less than about 0.2 and 0.35 eV, respectively. Valence band spectra and LEED observations by Na adsorption on the 3 x 2 surface at room temperature show that the S-1 state is preferentially quenched with the phase transition from the 3 x 2 to 3 x 1-Na surface. On the other hand, the S-2 state starts to change after the complete quenching of S-1 state and the phase transition. From these results, the origins of two dangling bond states are discussed based on Ranke's and the puckering structural model for the 3 x 2 surface. (C) 2001 Elsevier Science B.V, All rights reserved.