Research on Temperature Effect in Insulator-Metal Transition Selector Based on NbOx Thin Films

被引：26

作者：

Chen, Ao ^{[1
,2
]}

Ma, Guokun ^{[1
,2
]}

He, Yuli ^{[1
,2
]}

Chen, Qin ^{[1
,2
]}

Liu, Chunlei ^{[1
,2
]}

Wang, Hao ^{[1
,2
]}

Chang, Ting-Chang ^{[3
,4
]}

机构：

[1] Hubei Univ, Fac Phys & Elect Technol, Wuhan 430062, Hubei, Peoples R China

[2] Hubei Univ, Key Lab Ferroelect & Piezoelect Mat & Devices, Wuhan 430062, Hubei, Peoples R China

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 700, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 12期

关键词：

Insulator-metal transition (IMT); Schottky emission; selector; threshold switching (TS); PHASE-CHANGE MEMORY; MECHANISM;

D O I：

10.1109/TED.2018.2873638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the NbOx, which was regarded as a promising material based on its insulator-metal transition (IMT) effects, was applied as the switching layer of the device. The threshold switching characteristics were comprehensively investigated with particular emphasis on temperature dependence. The conduction mechanism for high-resistance state (HRS) was fitted and verified to be Schottky emission. With the increase in temperature, the fitting results demonstrated that the Schottky barrier decreased, leading to a reduction in the resistance of HRS. Furthermore, according to Fourier's law of heat conduction, the fluctuation range of temperature was smaller, causing a narrow distribution of the threshold voltage as the operating temperature increased. In addition, the increasing temperature caused high energy of electrons, which would induce an IMT more easily, leading to a lower threshold voltage. This paper provided the promise for improving the thermal stability of selected devices.

引用

页码：5448 / 5452

页数：5

共 33 条

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