Linear and third order nonlinear optical properties of GaAs quantum dot in terahertz region

被引：31
作者：
Nasa, Sukanya [1 ]
Purohit, S. P. [1 ]
机构：
[1] Jaypee Inst Informat Technol, Dept Phys & Mat Sci & Engn, A-10,Sect 62, Noida 201309, India
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 118卷
关键词：
Quantum dots; Third order nonlinearity; Terahertz radiation; Nanomaterials; REFRACTIVE-INDEX CHANGES; ABSORPTION-COEFFICIENTS; SPECTROSCOPY; IMPURITY; STATES;
D O I：
10.1016/j.physe.2019.113913
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the electronic and optical properties of GaAs quantum dot embedded in Ga1-yAlyAs matrix. Using the effective mass approximation with the finite confinement potential the intraband energy levels and the wave-functions are obtained. The linear and third order nonlinear optical properties, photoabsorption coefficient, refractive index change and susceptibility are studied for different dot radius in the terahertz region.
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页数：6
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