Linear and third order nonlinear optical properties of GaAs quantum dot in terahertz region

被引：31
作者：
Nasa, Sukanya [1 ]
Purohit, S. P. [1 ]
机构：
[1] Jaypee Inst Informat Technol, Dept Phys & Mat Sci & Engn, A-10,Sect 62, Noida 201309, India
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 118卷
关键词：
Quantum dots; Third order nonlinearity; Terahertz radiation; Nanomaterials; REFRACTIVE-INDEX CHANGES; ABSORPTION-COEFFICIENTS; SPECTROSCOPY; IMPURITY; STATES;
D O I：
10.1016/j.physe.2019.113913
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the electronic and optical properties of GaAs quantum dot embedded in Ga1-yAlyAs matrix. Using the effective mass approximation with the finite confinement potential the intraband energy levels and the wave-functions are obtained. The linear and third order nonlinear optical properties, photoabsorption coefficient, refractive index change and susceptibility are studied for different dot radius in the terahertz region.
引用
收藏
页数：6
相关论文
共 43 条
[21]  
Lee Y.S., 2009, PRINCIPLES TERAHERTZ, DOI [10.1007/978-0-387-09540-0, DOI 10.1007/978-0-387-09540-0.]
[22]   Linear and nonlinear optical absorption coefficients and refractive index changes in a two-electron quantum dot [J].
Lu, Liangliang ;
Xie, Wenfang ;
Hassanabadi, Hassan .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)
[23]   Quadrupole effects in photoabsorption in ZnO quantum dots [J].
Maikhuri, Deepti ;
Purohit, S. P. ;
Mathur, K. C. .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (10)
[24]   Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix [J].
Maikhuri, Deepti ;
Purohit, S. P. ;
Mathur, K. C. .
AIP ADVANCES, 2012, 2 (01)
[25]  
Pawar AY, 2013, Drug Invent. Today, V5, P157, DOI DOI 10.1016/J.DIT.2013.03.009
[26]   Biomedical applications of terahertz technology [J].
Pickwell, E. ;
Wallace, V. P. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (17) :R301-R310
[27]   Linear and nonlinear intersubband optical properties of Si quantum dot embedded in oxide, nitride, and carbide matrix [J].
Purohit, Anchala S. P. ;
Mathur, K. C. .
JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)
[28]   Photoabsorption and photoelectric process in Si nanocrystallites [J].
Purohit, Anchala S. P. ;
Mathur, K. C. .
APPLIED PHYSICS LETTERS, 2011, 98 (04)
[29]   Study of Photoabsorption and Photoelectric Process in GaAs Semiconductor Quantum Dot Nanostructure [J].
Purohit, S. P. ;
Mathur, K. C. .
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2010, 7 (06) :1131-1135
[30]   CHARACTERIZATION OF PROCESS-INDUCED STRAINS IN GAAS GA0.7AL0.3AS QUANTUM DOTS USING ROOM-TEMPERATURE PHOTOREFLECTANCE [J].
QIANG, H ;
POLLAK, FH ;
TANG, YS ;
WANG, PD ;
TORRES, CMS .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2830-2832
12345