Linear and third order nonlinear optical properties of GaAs quantum dot in terahertz region

被引：31

作者：

Nasa, Sukanya ^{[1
]}

Purohit, S. P. ^{[1
]}

机构：

[1] Jaypee Inst Informat Technol, Dept Phys & Mat Sci & Engn, A-10,Sect 62, Noida 201309, India

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 118卷

关键词：

Quantum dots; Third order nonlinearity; Terahertz radiation; Nanomaterials; REFRACTIVE-INDEX CHANGES; ABSORPTION-COEFFICIENTS; SPECTROSCOPY; IMPURITY; STATES;

D O I：

10.1016/j.physe.2019.113913

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study the electronic and optical properties of GaAs quantum dot embedded in Ga1-yAlyAs matrix. Using the effective mass approximation with the finite confinement potential the intraband energy levels and the wave-functions are obtained. The linear and third order nonlinear optical properties, photoabsorption coefficient, refractive index change and susceptibility are studied for different dot radius in the terahertz region.

引用

页数：6

共 43 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].