Borophenes made easy

被引:60
作者
Cuxart, Marc G. [1 ]
Seufert, Knud [1 ]
Chesnyak, Valeria [1 ]
Waqas, Wajahat A. [1 ]
Robert, Anton [2 ]
Bocquet, Marie-Laure [2 ]
Duesberg, Georg S. [3 ]
Sachdev, Hermann [3 ]
Auwaerter, Willi [1 ]
机构
[1] Tech Univ Munich, Phys Dept E20, James Franck Str 1, D-85748 Garching, Germany
[2] Sorbonne Univ, PSL Univ, Dept Chim, CNRS,PASTEUR,Ecole Normale Super, F-75005 Paris, France
[3] Univ Bundeswehr Munchen, Inst Phys EIT 2, Fak Elektrotech & Informat Tech, Werner Heisenberg Weg 39, D-85579 Neubiberg, Germany
基金
欧洲研究理事会; 欧盟地平线“2020”;
关键词
HEXAGONAL BORON-NITRIDE; 2-DIMENSIONAL BORON; GRAPHENE FILMS; LARGE-AREA; H-BN; POLYMORPHS;
D O I
10.1126/sciadv.abk1490
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
To date, the scalable synthesis of elemental two-dimensional materials beyond graphene still remains elusive. Here, we introduce a versatile chemical vapor deposition (CVD) method to grow borophenes, as well as borophene heterostructures, by selectively using diborane originating from traceable byproducts of borazine. Specifically, metallic borophene polymorphs were successfully synthesized on Ir(111) and Cu(111) single-crystal substrates and conjointly with insulating hexagonal boron nitride (hBN) to form atomically precise lateral borophene-hBN interfaces or vertical van der Waals heterostructures. Thereby, borophene is protected from immediate oxidation by a single hBN overlayer. The ability to synthesize high-quality borophenes with large single-crystalline domains in the micrometer scale by a straight-forward CVD approach opens up opportunities for the study of their fundamental properties and for device incorporation.
引用
收藏
页数:7
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