Resistive switching memory effect of ZrO2 films with Zr+ implanted

被引：184
|
作者：
Liu, Qi [1 ]
Guan, Weihua [1 ]
Long, Shibing [1 ]
Jia, Rui [1 ]
Liu, Ming [1 ]
Chen, Junning [2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Dev Integrated Technol, Beijing 100029, Peoples R China
[2] Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2832660
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Au/Cr/Zr+-implanted-ZrO2/n(+)-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (R-ratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles
    Filatov, D. O.
    Shenina, M. E.
    Rozhentsov, I. A.
    Koryazhkina, M. N.
    Novikov, A. S.
    Antonov, I. N.
    Ershov, A., V
    Gorshkov, A. P.
    Gorshkov, O. N.
    SEMICONDUCTORS, 2021, 55 (09) : 731 - 734
  • [22] Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles
    D. O. Filatov
    M. E. Shenina
    I. A. Rozhentsov
    M. N. Koryazhkina
    A. S. Novikov
    I. N. Antonov
    A. V. Ershov
    A. P. Gorshkov
    O. N. Gorshkov
    Semiconductors, 2021, 55 : 731 - 734
  • [23] Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device
    Tsai, Tsung-Ling
    Ho, Tsung-Han
    Tseng, Tseung-Yuen
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (03)
  • [24] Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
    Wang, Sheng-Yu
    Tsai, Chen-Han
    Lee, Dai-Ying
    Lin, Chih-Yang
    Lin, Chun-Chieh
    Tseng, Tseung-Yuen
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1628 - 1632
  • [25] Memory effect of RF sputtered ZrO2 thin films
    Lin, Chih-Yang
    Wu, Chung-Yi
    Wu, Chen-Yu
    Lin, Chun-Chieh
    Tseng, Tseung-Yuen
    THIN SOLID FILMS, 2007, 516 (2-4) : 444 - 448
  • [26] Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
    Lin, Chih-Yang
    Wu, Chung-Yi
    Wu, Chen-Yu
    Tseng, Tseung-Yuen
    Hu, Chenming
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
  • [27] Highly Improved Performance in Ag-Doped BSA Films by Inserting the ZrO2 Layer for Nonvolatile Resistive Switching Memory
    Wang, Hongwei
    Gao, Chao
    Sun, Kaixuan
    Shi, Chenyang
    Yan, Xiaobing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (02) : 510 - 515
  • [28] Investigation of analog resistive switching in ZrO2 nanostructured film
    Sharma, Aman
    Faraz, Mohd
    Khare, Neeraj
    EUROPEAN PHYSICAL JOURNAL PLUS, 2022, 137 (10):
  • [29] On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
    Guan, Weihua
    Liu, Ming
    Long, Shibing
    Liu, Qi
    Wang, Wei
    APPLIED PHYSICS LETTERS, 2008, 93 (22)
  • [30] Investigation of analog resistive switching in ZrO2 nanostructured film
    Aman Sharma
    Mohd Faraz
    Neeraj Khare
    The European Physical Journal Plus, 137
12345