Electrochemical deposition of metals onto silicon

The general concepts governing the electrochemical deposition of metal films onto semiconductors are discussed. Deposition onto semiconductor surfaces is complicated due to the band structure of the semiconductor, which affects both the thermodynamics and the kinetics of metal deposition processes. The influence of the potential distribution at the semiconductor/solution interface on the charge transfer mechanisms involved in deposition of metals is discussed. Models for electrochemical nucleation and growth are described and the influence of the unique physical properties of semiconductors is analysed. Finally, we present recent results for electrochemical deposition of gold, copper and platinum onto n-type silicon.