Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

被引:15
|
作者
Zhang Qi [1 ,2 ]
Zhang Hao [1 ,2 ]
Zhang Xiao-Wen [3 ]
Xu Tao [1 ,2 ]
Wei Bin [1 ,2 ]
机构
[1] Shanghai Univ, Minist Educ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China
[3] Guilin Univ Elect Technol, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
基金
中国国家自然科学基金;
关键词
exciplex; tunable UV emission; electroluminescent absorption; DEVICES; LAYER;
D O I
10.1088/1674-1056/24/2/024222
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized.
引用
收藏
页数:6
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