Impact of Carrier Transport on Aquamarine-Green Laser Performance

被引：28

作者：

Sizov, Dmitry S. ^{[1
]}

Bhat, Rajaram ^{[1
]}

Zakharian, Aramais ^{[1
]}

Napierala, Jerome ^{[1
]}

Song, Kechang ^{[1
]}

Allen, Donald ^{[1
]}

Zah, Chung-en ^{[1
]}

机构：

[1] Corning Inc, Corning, NY 14831 USA

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 12期

关键词：

QUANTUM-WELLS; OPTICAL GAIN; DIODES; RELAXATION; GAN; SIMULATION; DYNAMICS; NITRIDE; NM;

D O I：

10.1143/APEX.3.122101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the carrier transport phenomena of the multiple-quantum-well (MQW) active region and their impact on the performance of aquamarine and green laser diodes (LDs) grown on polar and semipolar planes. The ballistic carrier transport mechanism was found to be dominant in the MQW region. For the c-plane, because of the high hole capture probability and slow escape rate, mainly the quantum wells (QWs) positioned close to the p-side are electrically pumped. The optical loss induced by the underpumped QWs further away from the p-side leads to significantly higher laser threshold current density and a longer lasing wavelength with increased number of QWs. These effects are not significant for semipolar LD structures. (C) 2010 The Japan Society of Applied Physics

引用

收藏

页数：3

相关论文

共 17 条

[1] Simulation of visible and ultra-violet group-III nitride light emitting diodes [J].

Bulashevich, KA ;

Mymrin, VF ;

Karpov, SY ;

Zhmakin, IA ;

Zhmakin, AI .

JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 213 (01) :214-238

[2] 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].

Enya, Yohei ;

Yoshizumi, Yusuke ;

Kyono, Takashi ;

Akita, Katsushi ;

Ueno, Masaki ;

Adachi, Masahiro ;

Sumitomo, Takamichi ;

Tokuyama, Shinji ;

Ikegami, Takatoshi ;

Katayama, Koji ;

Nakamura, Takao .

APPLIED PHYSICS EXPRESS, 2009, 2 (08)

[3] True green InGaN laser diodes [J].

Lutgen, Stephan ;

Avramescu, Adrian ;

Lermer, Teresa ;

Queren, Desiree ;

Mueller, Jens ;

Bruederl, Georg ;

Strauss, Uwe .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (06) :1318-1322

[4] 510-515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate [J].

Miyoshi, Takashi ;

Masui, Shingo ;

Okada, Takeshi ;

Yanamoto, Tomoya ;

Kozaki, Tokuya ;

Nagahama, Shin-ichi ;

Mukai, Takashi .

APPLIED PHYSICS EXPRESS, 2009, 2 (06)

[5] Characteristics of InGaN multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, SI ;

Iwasa, N ;

Yamada, T .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3269-3271

[6] Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells [J].

Ozgür, U ;

Everitt, HO ;

Keller, S ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2003, 82 (09) :1416-1418

[7] Simulation and optimization of 420 nm InGaN/GaN laser diodes [J].

Piprek, J ;

Sink, RK ;

Hansen, MA ;

Bowers, JE ;

DenBaars, SP .

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 :28-39

[8] 500 nm electrically driven InGaN based laser diodes [J].

Queren, Desiree ;

Avramescu, Adrian ;

Bruederl, Georg ;

Breidenassel, Andreas ;

Schillgalies, Marc ;

Lutgen, Stephan ;

Strauss, Uwe .

APPLIED PHYSICS LETTERS, 2009, 94 (08)

[9] Strain-induced polarization in wurtzite III-nitride semipolar layers [J].

Romanov, A. E. ;

Baker, T. J. ;

Nakamura, S. ;

Speck, J. S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)

[10] P-TYPE GALLIUM NITRIDE BY REACTIVE ION-BEAM MOLECULAR-BEAM EPITAXY WITH ION-IMPLANTATION, DIFFUSION, OR COEVAPORATION OF MG [J].

RUBIN, M ;

NEWMAN, N ;

CHAN, JS ;

FU, TC ;

ROSS, JT .

APPLIED PHYSICS LETTERS, 1994, 64 (01) :64-66