Effects of NaCl treatment on the performance and environmental stability of microporous SiO2-based thin film transistors

被引:1
作者
Dou, Wei [1 ]
Tan, Yuanyuan [2 ]
机构
[1] Hunan Normal Univ, Sch Phys & Elect, Key Lab Low Dimens Quantum Struct & Quantum Contr, Changsha 410081, Hunan, Peoples R China
[2] Hunan First Normal Univ, Changsha 410205, Hunan, Peoples R China
关键词
FIELD-EFFECT TRANSISTORS; LOW-VOLTAGE; MOBILITY;
D O I
10.1039/c9ra08621h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this letter, we report the effects of NaCl treatment on the performance and environmental stability of microporous SiO2-based thin film transistors (TFTs). It was found that appropriate amounts of NaCl treatment significantly improved the electric double layer (EDL) capacitance of such composite solid electrolytes from 1.9 to 4.7 mu F cm(-2). A highest field effect mobility of 42.8 cm(2) V-1 s(-1) was found for 1% NaCl treated microporous SiO2-based TFTs. However, 10% and 26.5% NaCl treated microporous SiO2-based TFTs showed good environmental stability of the I-on/I-off ratio with reasonable field effect mobility.
引用
收藏
页码:37436 / 37439
页数:4
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