Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

被引：12
作者：
Liu, Shiu-Jen [1 ]
Fang, Hau-Wei [2 ]
Hsieh, Jang-Hsing [3 ]
Juang, Jenh-Yih [4 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Math & Sci Precoll, New Taipei City 24449, Taiwan
[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[3] Mingchi Univ Technol, Dept Mat Engn, New Taipei City 24301, Taiwan
[4] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
来源：
MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 06期
关键词：
Amorphous materials; Semiconductors; Sputtering; Electrical properties; Magnetic properties; Optical properties; OXIDE SEMICONDUCTOR; CARRIER TRANSPORT;
D O I：
10.1016/j.materresbull.2012.02.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1568 / 1571
页数：4
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