Structure-Property Correlations in a Ce-Doped (Lu,Gd)2SiO5:Ce Scintillator

被引：57

作者：

Sidletskiy, Oleg ^{[1
]}

Belsky, Andrei ^{[2
]}

Gektin, Alexander ^{[1
]}

Neicheva, Svetlana ^{[1
]}

Kurtsev, Daniil ^{[1
]}

Kononets, Valerii ^{[1
,2
]}

Dujardin, Christophe ^{[2
]}

Lebbou, Kheirreddine ^{[2
]}

Zelenskaya, Olga ^{[1
]}

Tarasov, Vladimir ^{[1
]}

Belikov, Konstantin ^{[3
]}

Grinyov, Boris ^{[1
]}

机构：

[1] Inst Scintillat Mat, UA-61001 Kharkov, Ukraine

[2] Univ Lyon 1, CNRS, LPCML, UMR5620, F-69622 Villeurbanne, France

[3] SSI Inst Single Crystals, UA-61001 Kharkov, Ukraine

来源：

CRYSTAL GROWTH & DESIGN | 2012年 / 12卷 / 09期

关键词：

CZOCHRALSKI GROWTH; ENERGY RESOLUTION; SINGLE-CRYSTALS; LUMINESCENCE; LGSO; RADIATION; CA2+; LSO;

D O I：

10.1021/cg300608t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A full concentration range of Lu2xGd2-2xSiO5 (LGSO:Ce) crystals was grown by the Czochralski method. Dependence of the scintillation properties on composition (x) in the range of solid solutions is established. It was determined that the LGSO:Ce scintillation yield increases in the range 0.3 < x < 0.8 and reaches 29000 phot/MeV at 60% of Lu in the host (x = 0.6), and energy resolution improves up to 6.7% at 662 KeV. The observed light yield increase, surprisingly high Ce3+ segregation coefficients, improvement of energy resolution, and suppression of afterglow can be attributed to modification of both hot and thermalized diffusion of secondary electrons and holes induced by short-range separation in solid solution. The proposed approach can be valid for a wide range of mixed scintillation crystals and provides room for further improvement of their characteristics by isovalent substitution of host atoms.

引用

页码：4411 / 4416

页数：6

共 39 条

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