Thiocyanate assisted nucleation for high performance mix-cation perovskite solar cells with improved stability

被引：35

作者：

Yi, Haimang ^{[1
]}

Duan, Leiping ^{[1
]}

Haque, Faiazul ^{[1
]}

Bing, Jueming ^{[1
]}

Zheng, Jianghui ^{[1
]}

Yang, Yilin ^{[1
]}

Mo, Alvin Cheuk-him ^{[1
]}

Zhang, Yu ^{[1
]}

Xu, Cheng ^{[1
]}

Conibeer, Gavin ^{[1
]}

Uddin, Ashraf ^{[1
]}

机构：

[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

JOURNAL OF POWER SOURCES | 2020年 / 466卷 / 466期

关键词：

Thiocyanate; Perovskite solar cell; High efficiency; Improved stability; c-AFM; KPFM; SCLC; FORCE MICROSCOPY INVESTIGATIONS; ELECTRON-TRANSPORT LAYER; CRYSTAL GRAIN-SIZE; HIGH-EFFICIENCY; THIN-FILMS; LEAD; HYSTERESIS; GROWTH; SNO2; PASSIVATION;

D O I：

10.1016/j.jpowsour.2020.228320

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrated a high performance MA(0.6)FA(0.4)PbI(x)Br(1-x) mix-cation perovskite solar cell with thiocyanate assisted nucleation on low temperature processed SnO2 electron transport layer by gas-quenching deposition. The perovskite solar cell with thiocyanate additive exhibited enlarged grain size closed to 1 mu m with improved power conversion efficiency (PCE) and better device stability. With the aid of thiocyanate additive, the champion cell has achieved the PCE of 19.64% with fill factor over 75%. Moreover, the SCN- assisted device showed considerably improved stability which retained 90% of its original PCE after degradation for 28 days, while the control device suffered 10% PCE loss after 14 days. Characterizations such as current density - voltage, electron microscopy (SEM, c-AFM, KPFM) and space-charge limited current-voltage (SCLC) measurements have been conducted for investigating the mechanism behind. The superior performance of SCN- assisted perovskite is owning to enlarged grain interiors as well as passivated grain boundaries, which attributed to the reduced current leakage, enhanced charge transport characteristics, and less trap-assisted interfacial recombination in the device.

引用

页数：10

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