Rapid characterization of parametric distributions using a multi-meter

被引：73

作者：

Hayes, Jerry ^{[1
]}

Agarwal, Kanak ^{[1
]}

Nassif, Sani ^{[1
]}

机构：

[1] IBM Austin Res Labs, Austin, TX 78758 USA

来源：

2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS | 2008年

关键词：

random dopant fluctuation; process variation; test array; MOSFET; threshold voltage;

D O I：

10.1109/ICMTS.2008.4509308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a technique for fast characterization of the statistical mean and sigma of parametric variations. The technique uses a scan chain to sequentially cycle through a device array, creating a periodic waveform that can be directly measured using a multi-meter. The DC and RMS values of the waveform directly give the mean and sigma of the parameter distribution. We show the technique is sufficiently general and can be applied to wide range of characterization strategies. A V,. characterization array was implemented in a 65nm bulk CMOS process where we compare traditional individual device measurements for calculating statistics with the direct mean and sigma measurement technique using the multi-meter.

引用

页码：17 / 20

页数：4

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