Synthesis, characterization & study of Ni-doped CdS nanoparticle for high voltage application

被引:6
|
作者
Kumar, Anil [1 ]
Sharma, Ramesh K. [1 ]
Goyal, Navdeep [3 ]
Gautam, Sanjeev [2 ]
机构
[1] Panjab Univ, CIL UCIM Dept, Chandigarh 160014, India
[2] Panjab Univ, Dr SS Bhatnagar Univ Inst Chem Engn & Technol, Adv Funct Mat Lab, Chandigarh 160014, India
[3] Panjab Univ, Dept Phys, Chandigarh 160014, India
关键词
Cadmium Sulphide; Crystal structure; Band gap; High voltage dc device; Light sensitive materials; Power electronics; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; SEMICONDUCTOR; FERROMAGNETISM; FILMS; MN;
D O I
10.1016/j.vacuum.2018.10.018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pure and Ni-doped Cadmium Sulphide nanoparticle were synthesized using chemical precipitation method. Characterizing tools like X-ray diffraction(XRD), Infra Red Spectroscopy, Ultraviolet-visible(UV-vis) spectroscopy, Transmission Electron Microscopy(TEM) and Field Emission Scanning Electron Microscopy(FE-SEM) were used for the analysis of the synthesized sample. Structure of the nanoparticle was confirmed to be Zinc blende with peaks for (111), (220) and (311) planes from XRD pattern. Crystallite size was also estimated using Scherrer's formula compared with average particle size measured from TEM micrographs. FE-SEM image represented surface morphology of the sample. UV-vis spectra exhibited a blue shift in Ni-doped material in respect to bulk counterpart and Fourier Transform Infra-Red spectra showed that Ni+2 ion replaces Cd in the CdS host matrix. Electrical resistance measurement indicated a saturation in the resistance after 150 Vdc for all doping and different illumination intensity levels. This effect proposes the synthesized material for high voltage applications.
引用
收藏
页码:75 / 80
页数:6
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