Improvement of hole mobility in organic field-effect transistors based on octyl-substituted oligo-p-phenylenevinylene by thermal treatment at smectic liquid crystalline phase

被引：5

作者：

Nakamura, Hiroaki ^{[1
]}

Saito, Masatoshi ^{[1
]}

Kusumoto, Tadashi ^{[1
]}

Yasuda, Takeshi ^{[2
,3
,4
]}

Tsutsui, Tetsuo ^{[2
,3
]}

机构：

[1] Idemitsu Kosan Co Ltd, Cent Res Labs, Chiba 2990293, Japan

[2] Kyushu Univ, Dept Appl Sci & Elect & Mat, Grad Sch Engn Sci, Fukuoka 8168580, Japan

[3] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 02期

关键词：

D O I：

10.1143/APEX.1.021802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic field-effect transistors based on octyl-subustituted oligo-p-phenylenevinylene have been studied. We have succeeded in improving field-effect hole mobilities by thermal treatment at liquid crystalline phase characterized as a highly ordered smectic phase. The field-effect mobility of the device as vacuum-evaporated was calculated to be 6.9 x 10 (- 3) cm(2) V (- 1) s (- 1) whereas the mobility was enhanced to 1.7 x 10 (- 1) cm(2) V (- 1) s (- 1) after annealing the device at 100 degrees C for 12 h. From the surface morphology of the films observed by using atomic force microscope, the enhancement is found to be attributed to reduction of defect density in the film because of the thermal movement of liquid-crystal molecules. (c) 2008 The Japan Society of Applied Physics.

引用

页数：3

共 26 条

[1] Organic field-effect transistors based on oligo-p-phenylenevinylene derivatives
Yasuda, T
Saito, M
Nakamura, H
Tsutsui, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L313 - L315
[2] Organic field-effect transistors based on oligo-p-phenylenevinylene derivatives
Yasuda, Takeshi
Saito, Masatoshi
Nakamura, Hiroaki
Tsutsui, Tetsuo
Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (8-11):
[3] Air stability of p-channel organic field-effect transistors based on oligo-p-phenylenevinylene derivatives
Ashimine, Tomoyuki
Yasuda, Takeshi
Saito, Masatoshi
Nakamura, Hiroaki
Tsutsui, Tetsuo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) : 1760 - 1762
[4] Air stability of p-channel organic field-effect transistors based on oligo-p-phenylenevinylene derivatives
Ashimine, Tomoyuki
Yasuda, Takeshi
Saito, Masatoshi
Nakamura, Hiroaki
Tsutsui, Tetsuo
Japanese Journal of Applied Physics, 2008, 47 (3 PART 1): : 1760 - 1762
[5] Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors
Funahashi, Masahiro
Zhang, Fapei
Tamaoki, Nobuyuki
IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (11) : 1720 - 1726
[6] Highly balanced ambipolar mobilities with intense electroluminescence in field-effect transistors based on organic single crystal oligo(p-phenylenevinylene) derivatives
Nakanotani, Hajime
Saito, Masatoshi
Nakamura, Hiroaki
Adachi, Chihaya
APPLIED PHYSICS LETTERS, 2009, 95 (03)
[7] Control of p- and n-type carriers by end-group substitution in oligo-p-phenylenevinylene-based organic field-effect transistors
Yasuda, Takeshi
Saito, Masatoshi
Nakamura, Hiroaki
Tsutsui, Tetsuo
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[8] Organic field-effect transistors based on new TTF-based liquid crystalline materials
Katsuhara, M
Aoyagi, I
Nakajima, H
Mori, T
Kambayashi, T
Ofuji, M
Takanishi, Y
Ishikawa, K
Takezoe, H
Hosono, H
SYNTHETIC METALS, 2005, 149 (2-3) : 219 - 223
[9] Improvement in Mobility and Stability of n-Type Organic Field-Effect Transistors with a Hole Transporting Interfacial Layer
Nakayama, Ken-ichi
Ishikawa, Motomi
Yokoyama, Masaaki
APPLIED PHYSICS EXPRESS, 2009, 2 (02)
[10] F and CF3 substituted solution processable oligo para-phenylenevinylene for ambipolar and hole-transporting organic field effect transistors
Chini, Mrinmoy Kumar
Das, Chayanika
Chatterjee, Shyambo
CHEMICAL PHYSICS LETTERS, 2016, 657 : 26 - 32

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