Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

被引:7
作者
Gassmann, Juergen [1 ]
Broetz, Joachim [1 ]
Klein, Andreas [1 ]
机构
[1] Tech Univ Darmstadt, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany
关键词
Indium tin oxide (ITO); Zinc phtalocyanine (ZnPc); Photoelectron spectroscopy; Magnetron sputtering; Energy band alignment; Inverted OLED; LIGHT-EMITTING DEVICES; THIN-FILMS; ELECTRICAL-PROPERTIES; RECENT PROGRESS; BAND ALIGNMENT; IN-SITU; SURFACE; SEMICONDUCTORS; IN2O3; BULK;
D O I
10.1016/j.apsusc.2011.12.062
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:3913 / 3919
页数:7
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