Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications

被引：0

作者：

Anderson, Travis J. ^{[1
]}

Luna, Lunet E. ^{[1
]}

Koehler, Andrew D. ^{[1
]}

Tadjer, Marko J. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Kub, Francis J. ^{[1
]}

Aktas, Ozgur ^{[2
]}

Odnoblyudov, Vladimir ^{[2
]}

Basceri, Cem ^{[2
]}

机构：

[1] US Naval Res Lab, Washington, DC 17297 USA

[2] Qromis Inc, Santa Clara, CA USA

来源：

2018 IEEE 6TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2018年

关键词：

GaN; JFET; power switching; engineered substrate;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral GaN-based p-n junction gated field effect transistor (LJFET) devices have been demonstrated on 200mm engineered substrates. The maximum current density was 200 mA/mm and threshold voltage was -30V. Large gate width devices (40mm) exhibited 800 mA current. The devices have blocking capability exceeding 1.1 kV.

引用

页码：14 / 17

页数：4

共 5 条

[1] Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates [J].

Anderson, Travis J. ;

Koehler, Andrew D. ;

Tadjer, Marko J. ;

Hite, Jennifer K. ;

Nath, Anindya ;

Mahadik, Nadeemullah A. ;

Aktas, Ozgur ;

Odnoblyudov, Vladimir ;

Basceri, Cem ;

Hobart, Karl D. ;

Kub, Francis J. .

APPLIED PHYSICS EXPRESS, 2017, 10 (12)

[2]

Appels J A., 1979, 1979 International Electron Devices Meeting, P238, DOI [DOI 10.1109/IEDM.1979.189589, 10.1109/IEDM.1979.18958946, DOI 10.1109/IEDM.1979.18958946]

[3] Reliability studies of vertical GaN devices based on bulk GaN substrates [J].