A Miniature Low-Power Ultra-Wideband Low Noise Amplifier in 0.18 μm CMOS

被引：2
|
作者：
Guan, Xin [1 ]
Cam Nguyen [1 ]
机构：
[1] Texas A&M Univ, Dept ECE, College Stn, TX 77843 USA
来源：
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2011年 / 21卷 / 03期
关键词：
ultra-wideband; low noise amplifier; CMOS RFIC; resistive feedback amplifier; DESIGN;
D O I：
10.1002/mmce.20504
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A 0.18-mu m CMOS low-noise amplifier (LNA) operating over the entire ultra-wideband (UWB) frequency range of 3.1-10.6 GHz, has been designed, fabricated, and tested. The UWB LNA achieves the measured power gain of 7.5 +/- 2.5 dB, minimum input matching of -8 dB, noise figure from 3.9 to 6.3 dB, and IIP3 from -8 to -1.9 dBm, while consuming only 9 mW over 3-10 GHz. It occupies only 0.55 x 0.4 mm(2) without RF and DC pads. The design uses only two on-chip inductors, one of which is such small that could be replaced by a bonding wire. The gain, noise figure, and matching of the amplifier are also analyzed. (C) 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE 21:241-250,2011.
引用
收藏
页码：241 / 250
页数：10
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