Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers

被引：7

作者：

Bresciani, M. ^{[1
]}

Paussa, A. ^{[1
]}

Palestri, P. ^{[1
]}

Esseni, D. ^{[1
]}

Selmi, L. ^{[1
]}

机构：

[1] DIEGM Univ Udine, Via Sci 208, I-33100 Udine, Italy

来源：

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年

关键词：

ELECTRON-MOBILITY;

D O I：

10.1109/IEDM.2010.5703461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (mu) and the high-field drift velocity (nu(d)) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.

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页数：4

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