共 38 条
High performance fluorescent and phosphorescent organic light-emitting diodes based on a charge-transfer-featured host material
被引:17
作者:
Wang, Xu
[1
]
Zhou, Jie
[2
]
Zhao, Juan
[1
]
Lu, Zhiyun
[2
]
Yu, Junsheng
[1
]
机构:
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Sichuan Univ, Coll Chem, Chengdu 610064, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Organic light-emitting diode (OLED);
Charge-transfer-featured host;
Fluorescent dye;
Phosphorescent dye;
Up-conversion;
Direct exciton formation;
EXTERNAL QUANTUM EFFICIENCY;
ELECTROPHOSPHORESCENT DEVICES;
DELAYED FLUORESCENCE;
ELECTROLUMINESCENT DEVICES;
ENERGY-TRANSFER;
RED;
EXCIPLEX;
FABRICATION;
EMISSION;
EXCITONS;
D O I:
10.1016/j.orgel.2015.03.006
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Fluorescent and phosphorescent organic light-emitting diodes (OLEDs) were fabricated using a charge-transfer-featured compound, 6-{3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy}-2-(4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione, as a host, and the electroluminescent (EL) characteristics of these two kinds of OLEDs were systematically studied. According to the photoluminescent quantum yields (eta(pl)), it was found that the external quantum efficiencies of both fluorescent and phosphorescent OLEDs were exceeding their theoretical limits. Based on the analysis of EL characteristics, the high device performance of fluorescent and phosphorescent OLEDs was attributed to both efficient energy transfer and triplet energy up-conversion, while direct exciton formation was also involved in phosphorescent OLEDs. In addition, the host film possessed high thermal and morphological stabilities due to the attachment of steric bulks on host molecule, resulting in the high doping concentration for both fluorescent and phosphorescent dyes. These results indicated that charge-transfer-featured material could be the promising host for both fluorescent and phosphorescent OLEDs. (C) 2015 Elsevier B.V. All rights reserved.
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页码:78 / 85
页数:8
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