Optoelectronic characteristics and field emission properties of indium-doped tin oxide nanowire arrays

被引：0

作者：

Xue Xin-Yu ^{[1
]}

Shi Song-Lin ^{[1
]}

Lin Zhi-Xian ^{[1
]}

Zheng Ke-Lu ^{[1
]}

Zhang Yong-Ai ^{[1
]}

Guo Tai-Liang ^{[1
]}

Wang Tai-Hong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2007年 / 24卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optoelectronic characteristics of individual indium-doped tin oxide (In-SnO2) nanowires are investigated by performing transport measurement with UV illumination on/ off circles. The current rapidly increases from 0.15 to 55 nA under UV illumination, which is ascribed to the increase of carrier concentration and the decrease of surface depletion. Efficient and stable. field emission is obtained from In-SnO2 nanowire arrays. The current density is up to 17mA/cm(2) at 3.4V/mu m, and the fluctuations are less than 1%. The emission behaviour is perfectly in agreement with the Fowler -Nordheim theory. Our results imply that In-SnO2 nanowires are promising candidates for UV detectors and field emission displays.

引用

页码：3492 / 3494

页数：3

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