In-situ poling of lithium niobate films on silicon wafer by applying a low electric field during pulsed laser deposition

被引：5

作者：

Guo, XL

Hu, WS

Liu, ZG

Zhu, SN

Yu, T

Xiong, SB

Lin, CY

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Ctr Mat Anal, Nanjing 210093, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 53卷 / 03期

基金：

中国国家自然科学基金;

关键词：

in-situ poling; lithium niobate film; pulsed laser deposition; silicon wafer;

D O I：

10.1016/S0921-5107(98)00152-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Completely c-oriented LiNbO3 (LN) films have been fabricated on p-type Si(lll)wafer coated with SiO2 buffer by applying a low electric field of E-f=8 V cm(-1) during pulsed laser deposition (PLD).)(X-ray photoelectron spectroscopy (XPS) analysis indicates that the stoichiometry of the film is in good agreement with that of the bulk LN target materials. The crystal structure of the as-grown him is tested by X-ray diffraction (XRD) using a theta-2 theta scan. The surface of the LN film is smooth, dense and crack-free, no large droplets are observed by scanning electron microscope (SEM). The X-ray energy dispersive spectrometer (XREDS) analysis to the different area of cross-section of the LN film shows that there are no variation of composition with the depth. Favourable optical waveguiding properties of the films are demonstrated by a prism coupler method. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：278 / 283

页数：6

共 18 条

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