Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

被引：28
作者：
Gity, Farzan [1 ,2 ]
Byun, Ki Yeol [1 ]
Lee, Ko-Hsin [1 ]
Cherkaoui, Karim [1 ]
Hayes, John M. [1 ]
Morrison, Alan P. [1 ,2 ]
Colinge, Cindy [1 ]
Corbett, Brian [1 ]
机构：
[1] Tyndall Natl Inst, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期
基金：
爱尔兰科学基金会;
关键词：
PERFORMANCE; HYDROGEN; PHOTODETECTOR; SIGE;
D O I：
10.1063/1.3688174
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400 degrees C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being > 8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T <= 400 degrees C) is an attractive option for heterogeneous integration. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688174]
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页数：3
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