Leakage currents in 4H-SiC JBS diodes

被引：7

作者：

Ivanov, P. A. ^{[1
]}

Grekhov, I. V. ^{[1
]}

Potapov, A. S. ^{[1
]}

Kon'kov, O. I. ^{[1
]}

Il'inskaya, N. D. ^{[1
]}

Samsonova, T. P. ^{[1
]}

Korol'kov, O. ^{[2
]}

Sleptsuk, N. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tallinn Univ Technol, Dept Elect, Tallinn, Estonia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 03期

关键词：

SCHOTTKY DIODES; BARRIER; RECTIFIERS; DEFECTS;

D O I：

10.1134/S106378261203013X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density similar to 10(4) cm(-2)), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 mu m between local p-type regions).

引用

页码：397 / 400

页数：4

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