4H-SiC BJTs with current gain of 110

被引：37

作者：

Zhang, Qingchun ^{[1
]}

Agarwal, Anant ^{[1
]}

Burka, Al ^{[1
]}

Geil, Bruce ^{[2
]}

Scozzie, Charles ^{[2
]}

机构：

[1] Cree Inc, Res Triangle Pk, NC 27709 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 07期

关键词：

power BJTs; degradation; current gain; base thickness; silicon carbide; BVCEO; BVCBO;

D O I：

10.1016/j.sse.2008.03.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC BJTs with a common emitter current gain of 110 have been demonstrated. The high current gain was attributed to a thin base of 0.25 mu m which reduces the carrier recombination in the base region. The device open base breakdown voltage (BVCEO) of 270 V was much less than the open emitter breakdown voltage (BVCBO) of 1560 V due to the emitter leakage current multiplication from the high current gain by "transistor action" of BJTs. The device has shown minimal gain degradation after electrical stress at high current density of >200 A/cm(2) up to 25 h. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1008 / 1010

页数：3

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