Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN

被引：12

作者：

Shojiki, Kanako ^{[1
,2
]}

Shimokawa, Moe ^{[3
]}

Iwayama, Sho ^{[3
,4
]}

Omori, Tomoya ^{[3
]}

Teramura, Shohei ^{[3
]}

Yamaguchi, Akihiro ^{[5
]}

Iwaya, Motoaki ^{[3
]}

Takeuchi, Tetsuya ^{[3
]}

Kamiyama, Satoshi ^{[3
]}

Miyake, Hideto ^{[1
,4
]}

机构：

[1] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan

[2] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[3] Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan

[4] Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, Japan

[5] Seishin Trading Co Ltd, Chuo Ku, 1-4-4 Minatojima Minamimachi, Kobe, Hyogo 6500047, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 05期

关键词：

laser lift-off; AlGaN; nano-patterned AlN; vertical device; VAPOR-PHASE EPITAXY; GAN; SAPPHIRE; DECOMPOSITION; QUALITY; LEDS;

D O I：

10.35848/1882-0786/ac6567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed in detail from the structural and optical properties. The large-area high-yield LLO without cracks was found to be enabled by taking advantage of the intentional in-plane periodic and nanometer-scale inhomogeneous distribution of the AlN molar fraction in the AlGaN layer introduced by growing AlGaN on nano-patterned AlN.

引用

页数：6

共 41 条

[1] Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
Adivarahan, Vinod
Heidari, Ahmad
Zhang, Bin
Fareed, Qhalid
Islam, Monirul
Hwang, Seongmo
Balakrishnan, Krishnan
Khan, Asif
[J]. APPLIED PHYSICS EXPRESS, 2009, 2 (09)
[2] Laser lift-off of AlN/sapphire for UV light-emitting diodes
Aoshima, Hiroki
Takeda, Kenichiro
Takehara, Kosuke
Ito, Shun
Mori, Mikiko
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Amano, Hiroshi
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 753 - 756
[3] Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285nm
Asif, Fatima
Chen, Hung-Chi
Coleman, Antwon
Lachab, Mohamed
Ahmad, Iftikhar
Zhang, Bin
Fareed, Qhalid
Adivarahan, Vinod
Khan, Asif
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[4] The role of surface kinetics on composition and quality of AlGaN
Bryan, Isaac
Bryan, Zachary
Mita, Seiji
Rice, Anthony
Hussey, Lindsay
Shelton, Christopher
Tweedie, James
Maria, Jon-Paul
Collazo, Ramon
Sitar, Zlatko
[J]. JOURNAL OF CRYSTAL GROWTH, 2016, 451 : 65 - 71
[5] Study of GaN light-emitting diodes fabricated by laser lift-off technique
Chu, CF
Lai, FI
Chu, JT
Yu, CC
Lin, CF
Kuo, HC
Wang, SC
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) : 3916 - 3922
[6] Doan D., 2017, INT J ENG APPL SCI, V4, P51
[7] High brightness LEDs for general lighting applications using the new ThinGaN™-technology
Haerle, V
Hahn, B
Kaiser, S
Weimar, A
Bader, S
Eberhard, F
Plössl, A
Eisert, D
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12): : 2736 - 2739
[8] Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes
Hao, Guo-Dong
Taniguchi, Manabu
Tamari, Naoki
Inoue, Shin-ichiro
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (03)
[9] Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns
Iba, Yukino
Shojiki, Kanako
Kuboya, Shigeyuki
Uesugi, Kenjiro
Xiao, Shiyu
Miyake, Hideto
[J]. JOURNAL OF CRYSTAL GROWTH, 2021, 570
[10] 350.9 nm UV laser diode grown on low-dislocation-density AlGaN
Iida, K
Kawashima, T
Miyazaki, A
Kasugai, H
Mishima, S
Honshio, A
Miyake, Y
Iwaya, M
Kamiyama, S
Amano, H
Akasaki, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (4A): : L499 - L500

← 1 2 3 4 5 →