Photo-induced effects on electrical properties of Ga15Se81Ag4 chalcogenide thin films

被引：15

作者：

Alvi, M. A. ^{[1
]}

Khan, Shamshad A. ^{[2
]}

Al-Ghamdi, A. A. ^{[1
]}

机构：

[1] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah 21589, Saudi Arabia

[2] Sr Andrews Coll, Dept Phys, Gorakhpur 273001, Uttar Pradesh, India

来源：

MATERIALS LETTERS | 2012年 / 66卷 / 01期

关键词：

Amorphous materials; Thin films; Electrical properties; X-ray techniques; Photo-induced crystallization; PULSED-LASER DEPOSITION; AMORPHOUS FILMS; CRYSTALLIZATION; CONDUCTION; GLASS;

D O I：

10.1016/j.matlet.2011.08.083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present work deals with the study of photo-induced crystallization on thermally evaporated Ga15Se81Ag4 chalcogenide thin films. It has been achieved by shining white light using 1500W tungsten lamp. The ambient temperature during illumination process was controlled and kept at 75 degrees C, which is in between the glass transition and crystallization temperature of Ga15Se81Ag4 glasses. The exposure time was experimentally established for different illumination times from 0 to 120 min. After various exposure times, thin films were characterized by XRD and SEM. The dc conductivities and activation energies of these thin films were measured in temperature range of 303-403 K. It is found that the activation energy in Ga15Se81Ag4 chalcogenide thin films decreases with increasing the exposure time whereas the dc conductivity increases at each temperature by increasing the illumination time. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：273 / 275

页数：3

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