Microwave Properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 Hetero Layered Films Directly Sputtered on Si up to 50 GHz

被引：16

作者：

Yang, Lihui ^{[1
,2
]}

Wang, Genshui ^{[1
]}

Dong, Xianlin ^{[1
]}

Ponchel, Freddy ^{[2
]}

Remiens, Denis ^{[2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[2] CNRS, UMR 8520, IEMN DOAE MIMM Team, F-59655 Lille, France

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2011年 / 94卷 / 08期

关键词：

COMPOSITE THIN-FILMS; DIELECTRIC-PROPERTIES;

D O I：

10.1111/j.1551-2916.2011.04610.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Perovskite Ba0.6Sr0.4TiO3 (BST), pyrochlore Bi1.5Zn1.0Nb1.5O7 (BZN), and hetero layered BZN/BST films have been directly grown on high resistivity (HR)-Si substrates by radio frequency magnetron sputtering. The microwave properties (up to 50 GHz) of all the films are evaluated by fabricating coplanar waveguide configuration. Experimental results showed that the BZN layer helped in tailoring the dielectric constant and reducing the loss tangent significantly. Moreover, the resulting BZN/BST/HR-Si films show moderate permittivity (similar to 258) and tunability (similar to 15.63%, 200 kV/cm), and low microwave loss (similar to 0.0175) at 2GHz and their microwave properties (1-50 GHz) potentially could be made suitable for integrated microwave tunable devices.

引用

页码：2262 / 2265

页数：4

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