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Tunneling magnetoresistive heads beyond 150 Gb/in2
被引:35
|作者:
Mao, SN
[1
]
Linville, E
Nowak, J
Zhang, ZY
Chen, S
Karr, B
Anderson, P
Ostrowski, M
Boonstra, T
Cho, H
Heinonen, O
Kief, M
Xue, S
Price, J
Shukh, A
Amin, N
Kolbo, P
Lu, PL
Steiner, P
Feng, YC
Yeh, NH
Swanson, B
Ryan, P
机构:
[1] Seagate Technol, Recording Head Operat, Bloomington, MN 55435 USA
[2] Seagate Technol, Recording Subsyst Operat, Fremont, CA USA
关键词:
areal density;
current-perpendicular-to-plane (CPP) geometry;
perpendicular recording;
signal-to-noise ratio (SNR);
tunneling magnetoresistive (TMR) heads;
D O I:
10.1109/TMAG.2003.821167
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Tunneling magnetoresistive (TMR) readers capable of 150 Gb/in(2) of areal density magnetic recording for hard disk drive were demonstrated with bit-error-rate performance. The head design used is basically a bottom type stack of Ta/PtMn/CoFe/Ru/CoFe/oxide barrier/CoFe/NiFe/Ta cap with abutted hard bias stabilization. The electrical reader width is about 4 mu" to reach a very high track density and shield-to-shield spacing is about 700 Angstrom for high linear density. On-track bit error floor is better than 10(-5) at a linear density of 900 KBPI and the recording system noise is dominated by the media. The best areal density achieved (using -4 OTC reference level) is 143 Gb/in(2) using symmetric squeeze and 152 Gb/in2 using asymmetric squeeze method, respectively. It was found that the TMR head has several decibels more signal-to-noise ratio gain over spin valve readers at 150 Gb/in(2) and beyond. The TMR head is also suitable for perpendicular recording application.
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页码:307 / 312
页数:6
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