Mid-infrared tunable pulsed laser based on Cr2+-doped II-VI chalcogenide

被引：8

作者：

Aikawa, Shu ^{[1
,2
]}

Yumoto, Masaki ^{[2
]}

Saitoh, Tomohiko ^{[1
]}

Wada, Satoshi ^{[1
,2
]}

机构：

[1] Tokyo Univ Sci, Dept Appl Phys, 6-3-1 Niijuku, Tokyo 1258585, Japan

[2] RIKEN Ctr Adv Photon, Photon Control Technol Team, RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2021年 / 575卷

关键词：

Semiconducting II-VI materials; Solid state lasers; Characterization; Cadmium compounds; Zinc compounds; Infrared devices; ZINC CHALCOGENIDES; SPECTROSCOPY; EFFICIENT; RANGE; CDSE;

D O I：

10.1016/j.jcrysgro.2021.126341

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Cr2+-doped II-VI chalcogenides are attractive laser media for direct access to the mid-infrared (IR) region from 2 to 3 mu m. We have developed a mid-IR tunable laser using Cr:ZnSe and Cr:CdSe as laser media. We have used a Qswitched Tm:YAG laser as a pump source. For the Cr:ZnSe laser, the tuning range of 2.18-2.83 mu m and the maximum pulse energy of 4.98 mJ at 2.38 mu m were obtained with a pump energy of 22 mJ. For the Cr:CdSe laser, the tuning range of 2.22-3.04 mu m and the maximum pulse energy of 2.42 mJ at 2.54 mu m were achieved with a pump energy of 22 mJ. In addition, we have demonstrated a method of extending the mid-IR lasing region by a combined active medium technique with Cr:ZnSe and Cr:CdSe. We observed the broad tuning range from 2.15 to 3.04 mu m and the maximum pulse energy of 5.96 mJ at 2.44 mu m with a pump energy of 22 mJ.

引用

页数：5

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