Photoconductivity of self-assembled ZnO nanoparticles synthesized by organometallic chemistry

被引:39
作者
Carrey, J. [1 ]
Carrere, H. [1 ]
Kahn, M. L. [2 ]
Chaudret, B. [2 ]
Marie, X. [1 ]
Respaud, M. [1 ]
机构
[1] Inst Natl Sci Appl, Lab Phys & Chim Nano Objects, F-31077 Toulouse 4, France
[2] Chim Coordinat Lab, F-31077 Toulouse, France
关键词
D O I
10.1088/0268-1242/23/2/025003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the photoconductivity properties of devices based on ZnO nanoparticles for UV detection. The nanoparticles were synthesized by organometallic chemistry, self-assembled on Si substrates covered by inter-digited metallic electrodes and annealed at 200 degrees C. The photoconductivity of these devices was measured for wavelengths ranging from 300 to 600 nm. The sensitivity of our samples at 350 nm excitation wavelength is about 1 A cm(2) W-1, or 1200 A W-1, with a visible rejection of 150. The photoconductivity strongly depends on pressure and is one order of magnitude larger under vacuum than at atmospheric pressure. Transient photoconductivity characteristics at atmospheric pressure and under vacuum are fitted using stretched exponential functions and quantitatively analysed. These results show the potential use of chemically prepared ZnO nanoparticles for UV and/or gas detection.
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页数:5
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共 32 条
[1]   Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy [J].
Baxter, Jason B. ;
Schmuttenmaer, Charles A. .
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (50) :25229-25239
[2]   Synthesis and transport properties of ZnO nanorods and nanoparticles assemblies [J].
Carrey, J. ;
Kahn, M. L. ;
Sanchez, S. ;
Chaudret, B. ;
Respaud, M. .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2007, 40 (01) :71-75
[3]   Changes in electrical characteristics of ZnO thin films due to environmental factors [J].
Claflin, B. ;
Look, D. C. ;
Norton, D. R. .
JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) :442-445
[4]   Electrical properties of ZnO nanowire-field effect transistors characterized with scanning probes [J].
Fan, ZY ;
Lu, JG .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[5]   ZnO nanowire field-effect transistor and oxygen sensing property [J].
Fan, ZY ;
Wang, DW ;
Chang, PC ;
Tseng, WY ;
Lu, JG .
APPLIED PHYSICS LETTERS, 2004, 85 (24) :5923-5925
[6]   Charge injection and transport in films of CdSe nanocrystals [J].
Ginger, DS ;
Greenham, NC .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :1361-1368
[7]   Rectifying behavior of electrically aligned ZnO nanorods [J].
Harnack, O ;
Pacholski, C ;
Weller, H ;
Yasuda, A ;
Wessels, JM .
NANO LETTERS, 2003, 3 (08) :1097-1101
[8]   Optical and photoelectrical properties of ZnO thin films and the effects of annealing [J].
Henseler, MJH ;
Lee, WCT ;
Miller, P ;
Durbin, SM ;
Reeves, RJ .
JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) :48-53
[9]   UV photoresponse of single ZnO nanowires [J].
Heo, YW ;
Kang, BS ;
Tien, LC ;
Norton, DP ;
Ren, F ;
La Roche, JR ;
Pearton, SJ .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (03) :497-499
[10]   Pt/ZnO nanowire Schottky diodes [J].
Heo, YW ;
Tien, LC ;
Norton, DP ;
Pearton, SJ ;
Kang, BS ;
Ren, F ;
LaRoche, JR .
APPLIED PHYSICS LETTERS, 2004, 85 (15) :3107-3109