Pulsed laser deposition of ZnTe thin films

被引：19
作者：
Bhumia, S [1 ]
Bhattacharya, P [1 ]
Bose, DN [1 ]
机构：
[1] INDIAN INST TECHNOL,CTR MAT SCI,SEMICOND DIV,KHARAGPUR 721302,W BENGAL,INDIA
来源：
MATERIALS LETTERS | 1996年 / 27卷 / 06期
关键词：
thin film; semiconductor; laser; substrate temperature; heterojunction; silicon; glass substrates;
D O I：
10.1016/0167-577X(96)00009-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of ZnTe were deposited on glass and Si by pulsed laser ablation at substrate temperatures of 26 degrees C and 286 degrees C. X-ray diffraction studies showed that films deposited at 26 degrees C were amorphous and those deposited at 286 degrees C were polycrystalline. X-ray photoelectron spectroscopy (XPS) showed the Zn:Te ratio to be 49.1:50.9 for both types of films. The band gap of the films deposited at 286 degrees C was 2.2 eV. The conductivity of the films was 1.09 x 10(-3) Omega(-1) cm(-1) and 2.59 x 10(-6) Omega(-1) cm(-1) respectively at 300 K. The variation of conductivity with temperature and the properties of ZnTe/Si heterojunctions were also studied.
引用
收藏
页码：307 / 311
页数：5
相关论文
共 16 条
[1]   PULSED LASER DEPOSITION OF CDTE THIN-FILMS FOR HETEROJUNCTIONS ON SILICON [J].
BHATTACHARYA, P ;
BOSE, DN .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (05) :384-387
[2]  
BHATTACHARYA P, 1989, ELECTRON LETT, V25, P1602
[3]   PHOTOVOLTAIC PROPERTIES OF NORMAL-CDSE/PARA-ZNTE HETEROJUNCTIONS [J].
BUCH, F ;
FAHRENBRUCH, AL ;
BUBE, RH .
APPLIED PHYSICS LETTERS, 1976, 28 (10) :593-595
[4]   PHOTOVOLTAIC PROPERTIES OF 5 II-VI HETEROJUNCTIONS [J].
BUCH, F ;
FAHRENBRUCH, AL ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1596-1602
[5]   MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].
KATNANI, AD ;
MARGARITONDO, G .
PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956
[6]  
KIMMERLE J, 1985, P 6 EUR PHOT SOL EN, P199
[7]   GRAIN-BOUNDARY EFFECT IN POLYCRYSTALLINE ZNTE FILMS [J].
MAITI, B ;
GUPTA, P ;
CHAUDHURI, S ;
PAL, AK .
THIN SOLID FILMS, 1994, 239 (01) :104-111
[8]  
MEYERS PV, 1989, POLYCRYSTALLINE THIN
[9]   ELECTRICAL-PROPERTIES OF COPPER-DOPED ZNTE FILMS [J].
MONDAL, A ;
CHAUDHURI, S ;
PAL, AK .
THIN SOLID FILMS, 1989, 176 (02) :L183-L186
[10]   CONTINUOUS-WAVE OPERATION OF 489.9NM BLUE LASER-DIODE AT ROOM-TEMPERATURE [J].
NAKAYAMA, N ;
ITOH, S ;
OKUYAMA, H ;
OZAWA, M ;
OHATA, T ;
NAKANO, K ;
IKEDA, M ;
ISHIBASHI, A ;
MORI, Y .
ELECTRONICS LETTERS, 1993, 29 (25) :2194-2195
12