Characterization of group II hafnates and zirconates for metal-insulator-metal capacitors

被引：17

作者：

Lupina, Grzegorz ^{[1
]}

Seifarth, Olaf ^{[1
]}

Dudek, Piotr ^{[1
]}

Kozlowski, Grzegorz ^{[1
]}

Dabrowski, Jarek ^{[1
]}

Thieme, Hans-Juergen ^{[1
]}

Lippert, Gunther ^{[1
]}

Schroeder, Thomas ^{[1
]}

Muessig, Hans-Joachim ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 02期

关键词：

dielectric thin films; high-k capacitors; X-ray absorption spectroscopy; HIGH-K DIELECTRICS; PEROVSKITE SOLID-SOLUTIONS; ELECTRONIC-STRUCTURE; SI(111); DEVICES; OXIDES;

D O I：

10.1002/pssb.201046456

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin layers of SrHfO(3), BaHfO(3) and BaZrO(3) are deposited onto TiN-substrates and investigated in view of memory capacitor applications. The as deposited layers are amorphous and show dielectric constants of about 20 Rapid thermal annealing induces crystallization in the cubic perovskite phase and results in an increase of the dielectric constant up to 45. A combination of X-ray absorption spectroscopy (XAS) and photoemission spectroscopy measurements reports high electronic band gap values comparable with that of reference HfO(2) layers.

引用

页码：323 / 326

页数：4

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