Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes

被引：46

作者：

Yamada, Hisashi ^{[1
]}

Iso, Kenji ^{[1
]}

Saito, Makoto ^{[1
]}

Fujito, Kenji ^{[2
]}

Denbaars, Steven P. ^{[1
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Mitsubishi Chem Corp, Optoelect Labs, Ibaraki 3001295, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 45-49期

关键词：

m-plane GaN; miscut angle; surface morphology; In incorporation;

D O I：

10.1143/JJAP.46.L1117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effect of m-plane GaN substrate miscut was investigated for InGaN/GaN multi quantum wells (MQWs) light emitting diodes (LEDs). The n-GaN and InGaN/GaN LEDs were grown by metal organic chemical vapor deposition on m-plane (I 100)GaN substrates with miscut angles toward the [000 (1) over bar] direction of 0.01 (nominally on-axis m-plane), 0.45, 0.75, 5.4, and 9.6 degrees. The surface morphology improved with increasing the miscut angles toward the [000 (1) over bar] direction. The peak emission wavelength of the electroluminescence grown on the on-axis m-plane and the miscut angle of 0.45 degrees was 391- 396 nm, while the miscut angle of 5.4 and 9.6 degrees showed 440-454 nm. These results demonstrate that the surface morphology of GaN and In incorporation in the MQWs are strongly impacted by the miscut angle of GaN substrate.

引用

页码：L1117 / L1119

页数：3

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