Electrical properties of amorphous high-κ HfTaTiO gate dielectric with dielectric constants of 40-60

High-quality Hf-based gate dielectrics with dielectric constants of 40-60 have been demonstrated. Laminated stacks of Hf, Th, and Ti with a thickness of similar to 10 angstrom each was deposited on Si followed by rapid thermal anneal. X-ray diffraction analysis showed that the crystallization temperature of the laminated dielectric stack is increased up to 900 degrees C. The excellent electrical properties of HfTaTiO dielectrics with TAN electrode have been demonstrated, including low interface state density (D-it), leakage current, and trap density. The effect of binary and ternary laminated metals on the enhancement of dielectric constant and electrical properties has been studied.