Time-dependent spin injection

被引：1

作者：

Bebenin, N. G. ^{[1
]}

机构：

[1] MN Mikheeve Inst Met Phys, Ekaterinburg 620108, Russia

来源：

SOLID-STATE ELECTRONICS | 2021年 / 186卷

关键词：

Spintronics; Spin injection; Transients; Ge; Si; GaAs; InSb; DYNAMICS;

D O I：

10.1016/j.sse.2021.108174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spin injection from ferromagnet into nonmagnetic semiconductor is theoretically investigated for the case when the electric current in ferromagnet/semiconductor structure depends on time. The study of switching on/off dc current showed that the time dependence of the magnetization at any point inside semiconductor does not obey the exponential law with spin relaxation time tau(s).

引用

页数：4

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