Strain rate dependence of hardness of AlN doped SiC

被引：5

作者：

Vandeperre, L. J. ^{[1
,2
]}

Ur-Rehman, N. ^{[1
,2
]}

Brown, P. ^{[1
,2
,3
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Ctr Adv Ceram, London SW7 2AZ, England

[3] Def Sci & Technol Lab, Salisbury SP4 0JQ, Wilts, England

来源：

ADVANCES IN APPLIED CERAMICS | 2010年 / 109卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

Strain rate; Plasticity; SiC; INDENTATION HARDNESS; PLASTIC INDENTATION; RATE SENSITIVITY; NANOINDENTATION; FRACTURE; SILICON; STRESS; TOUGHNESS; GLASS; SEMICONDUCTORS;

D O I：

10.1179/174367610X12804792635305

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tailored nanoindentation experiments were used to determine the strain rate dependence of the hardness of AlN doped SiC produced by spark plasma sintering. It is shown that in the nanoindentation regime, where cracking is limited, the hardness of SiC reduces by 0.8 GPa/decade reduction in strain rate. This measured variation in hardness is consistent with estimates for the strain rate dependence of the lattice resistance (Peierls stress) of SiC. These experiments therefore open up the possibility to determine real constitutive equations for plasticity in SiC and other armour ceramics.

引用

页码：493 / 497

页数：5

共 44 条

[1]

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[2] PLASTIC INDENTATION IN METALS WITH CONES [J].