Study on optimizing the performance of infrared detectors using material chip technology

Using material chip technology, large area n-on-p planar junctions with various boron implantation doses have been fabricated on an Hg1-xCdxTe (x = 0.291) film, similarly grown using molecular beam epitaxy, for the mid-infrared wavelength range. The current-voltage characteristics of p-n junctions have been measured on a cold stage at 77 K and an optimized ion implantation dose has been discovered. Zero bias resistance of all the junctions has been calculated and shows distinct dependence upon the boron implantation doses.