Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors

被引：11

作者：

Biolek, Dalibor ^{[1
,2
]}

Kohl, Zdenek ^{[2
]}

Vavra, Jiri ^{[2
]}

Biolkova, Viera ^{[3
]}

Bhardwaj, Kapil ^{[4
]}

Srivastava, Mayank ^{[4
]}

机构：

[1] Brno Univ Technol, Dept Microelect, Brno 61600, Czech Republic

[2] Univ Def, Dept Elect Engn, Brno 66210, Czech Republic

[3] Brno Univ Technol, Dept Radio Elect, Bmo 61600, Czech Republic

[4] Natl Inst Technol Jamshedpur, Dept Elect & Commun Engn, Jamshedpur 831014, Jharkhand, India

来源：

IEEE ACCESS | 2022年 / 10卷

关键词：

Memristors; Gyrators; Voltage; Voltage control; Transconductance; Predictive models; Licenses; Charge-controlled memristor; flux-controlled memristor; higher-order element; constitutive relation; oscillator; gyrator; OTA; CCII; CIRCUIT;

D O I：

10.1109/ACCESS.2022.3186281

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Two-ports for mutual transformation between flux-controlled memristors and charge-controlled memristors are proposed. Attention is paid to memristors with the region of negative differential memristance in the charge-flux constitutive relation, when such a transformation should be made carefully. Connections between this transformation, duality rules, and Chua's table of higher-order elements are described. The proposed transforming cells can be made up of commercially available integrated circuits. Their proper operation is demonstrated via simulations and lab experiments with memristive oscillators.

引用

页码：68307 / 68318

页数：12

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