Observation of hydrogen adsorption on 6H-SiC(0001) surface

被引：9
|
作者：
Fujino, T [1 ]
Fuse, T [1 ]
Ryu, JT [1 ]
Inudzuka, K [1 ]
Yamazaki, Y [1 ]
Katayama, M [1 ]
Oura, K [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan
来源：
APPLIED SURFACE SCIENCE | 2001年 / 169卷
关键词：
ion scattering spectroscopy; elastic recoil detection analysis; silicon carbide; atomic hydrogen adsorption;
D O I：
10.1016/S0169-4332(00)00755-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have used coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA) to investigate the adsorption of atomic hydrogen on the 6H-SiC(0 0 0 1)root3 x root3 surface. It has been found that the saturation coverage of hydrogen on the 6H-SiC(0 0 0 1)root3 x root3 surface is about 1.7 ML. Upon saturated adsorption of atomic hydrogen, the root3 x root3 surface structure changes to the 1 x 1 structure. The data of the CAICISS measurements have indicated that as a result of the hydrogen adsorption, Si adatoms on the root3 x root3 surface move from T-4 to on-top sites. O 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：113 / 116
页数：4
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