Minimization of damping in the electrooptic frequency response of high-speed Zn-diffusion single-mode vertical-cavity surface-emitting lasers

被引:7
作者
Shi, Jin-Wei [1 ]
Yang, L. -C. [1 ]
Chen, C. -C. [1 ]
Wu, Y. -S. [1 ]
Guol, S. -H. [2 ]
Yang, Ying-Jay [3 ]
机构
[1] Natl Cent Univ, Dept Elect Engn, Tao Yuan 320, Taiwan
[2] Natl Taiwan Univ, Inst Electroopt Engn, Taipei, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
关键词
semiconductor laser; vertical-cavity surface-emitting laser (VCSEL);
D O I
10.1109/LPT.2007.910087
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We utilize the Zn-diffusion technique to fabricate a single-mode high-speed 850-mn vertical-cavity surface-emitting laser. With this technique, we are able to minimize the thermal effect without greatly scaling down the diameter of the oxide-confined aperture. The demonstrated device has a 9-mu m active diameter with which we can attain a bandwidth of 8 GHz, a small differential resistance (similar to 47 Omega), and a maximum output power of 3 mW. The single-mode characteristics can be sustained under dynamic operation for the whole bias current range. The dynamic measurement results indicate that with this single-mode device the damping-limited bandwidth of our multimode control can be eliminated without a Zn-diffusion aperture. A larger intrinsic bandwidth (32 versus 21 GHz) is also obtained due to the minimization of damping. The narrower divergence angle (8 degrees versus 20 degrees) means that the device exhibits a larger alignment tolerance and much lower coupling loss (9 dB) when used with the standard multimode fiber than those of the control sample.
引用
收藏
页码:2057 / 2059
页数:3
相关论文
共 12 条
  • [1] Small-dimension power-efficient high-speed vertical-cavity surface-emitting lasers
    Chang, Y.-C.
    Wang, C. S.
    Coldren, L. A.
    [J]. ELECTRONICS LETTERS, 2007, 43 (07) : 396 - 397
  • [2] Stable single-mode operation of an 850-nm VCSEL with a higher order mode absorber formed by shallow Zn diffusion
    Chen, CC
    Liaw, SJ
    Yang, YJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (04) : 266 - 268
  • [3] COLDREN LA, 1995, DIODE LASERS PHOTONI, pCH5
  • [4] Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers
    Dang, G
    Luo, B
    Ren, F
    Hobson, WS
    Lopata, J
    Pearton, SJ
    Chang, W
    Shen, H
    [J]. SOLID-STATE ELECTRONICS, 2002, 46 (08) : 1247 - 1249
  • [5] High-power single-mode vertical-cavity surface-emitting lasers with triangular holey structure
    Furukawa, A
    Sasaki, S
    Hoshi, M
    Matsuzono, A
    Moritoh, K
    Baba, T
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (22) : 5161 - 5163
  • [6] Dynamic behavior of fundamental-mode stabilized VCSELs using a shallow surface relief
    Gustavsson, JS
    Haglund, Å
    Bengtsson, J
    Modh, P
    Larsson, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (06) : 607 - 619
  • [7] Dynamic mode stability analysis of surface relief VCSELs under strong RF modulation
    Haglund, Å
    Gustavsson, JS
    Modh, P
    Larsson, A
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (08) : 1602 - 1604
  • [8] LEAR KL, 2007, P SOC PHOTO-OPT INS, V6484
  • [9] High performance selectively oxidized VCSELs and arrays for parallel high-speed optical interconnects
    Mederer, F
    Ecker, I
    Joos, J
    Kicherer, M
    Unold, HJ
    Ebeling, KJ
    Grabherr, M
    Jäger, R
    King, R
    Wiedenmann, D
    [J]. IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2001, 24 (04): : 442 - 449
  • [10] HIGH MODULATION EFFICIENCY OF INTRACAVITY CONTACTED VERTICAL-CAVITY LASERS
    SCOTT, JW
    THIBEAULT, BJ
    MAHON, CJ
    COLDREN, LA
    PETERS, FH
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1483 - 1485