Control of silicidation in HfO2/Si(100) interfaces (vol 86, art. no. 041913, 2005)

被引：1
|
作者：
Cho, Deok-Yong
Park, Kee-Shik
Choi, B.-H.
Oh, S.-J. [1 ]
Chang, Y. J.
Kim, D. H.
Noh, T. W.
Jung, Ranju
Lee, Jae-Cheol
Bu, S. D.
机构：
[1] Seoul Natl Univ, Ctr Strongly Correleated Mat Res, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[3] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea
[4] Chonbuk Natl Univ, Dept Phys, Suwon 440900, South Korea
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期
关键词：
D O I：
10.1063/1.2802071
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
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