RC-TCIGBT: A reverse conducting trench clustered IGBT

被引：16

作者：

Kumar, Dinesh ^{[1
]}

Sweet, Mark ^{[1
]}

Vershinin, Konstantin ^{[1
]}

Ngwendson, Luther ^{[1
]}

Narayanan, E. M. S. ^{[1
]}

机构：

[1] De Montfort Univ, Emerging Technol Res Ctr, Gateway, Leicester LE1 9BH, Leics, England

来源：

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年

关键词：

D O I：

10.1109/ISPSD.2007.4294957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new, three terminal, Reverse Conducting Trench Clustered IGBT (RC-TCIGBT) is proposed and evaluated using numerical simulations in 1200 V, Non-Punch Through (NPT) technology. This device is a monolithic integration of an antiparallel thyristor (APT) in the TCIGBT [1, 2]. This approach does not increase device area and ensures snap-back free operation in the first (I-st) and third (IIIrd) quadrants. Moreover, it is shown that the RC-TCIGBT which belongs to the class of MOS bipolar devices with controlled thyristor action, can provide excellent Vce (sat)/Eoff trade-off and soft reverse recovery.

引用

页码：161 / +

页数：2

共 5 条

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Narayanan, EMS .

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[3]

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[5]

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