A 100-GHz 0.21-K NETD 0.9-mW/pixel Charge-Accumulation Super-Regenerative Receiver in 65-nm CMOS

被引：11

作者：

Feng, Guangyin ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Meng, Fanyi ^{[1
]}

Yi, Xiang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, IC Design Ctr Excellence, VIRTUS, Singapore 639798, Singapore

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 07期

关键词：

Charge-accumulation; CMOS; imaging receiver; low-power receiver; millimeter-wave imaging; power detector; radiometer; SRR; super-regeneration;

D O I：

10.1109/LMWC.2016.2574833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a charge-accumulation technique is proposed in the design of super-regenerative receiver (SRR), which significantly improves the receiver responsivity and sensitivity. Furthermore, a new power-injection method is adopted without loading the LC-tank of super-regenerative oscillator (SRO). Implemented in a 65-nm CMOS technology with a core area of 0.023 mm(2), the prototype achieves a sensitivity of -67 dBm, a noise-equivalent power (NEP) of 2.8 fW/Hz(0.5), and a noise-equivalent time difference (NETD) of 0.21 K with a power consumption of 0.9 mW.

引用

页码：531 / 533

页数：3

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