Self-aligned inversion N-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3(Gd2O3) dielectric

被引：0
作者：
Chen, Chih-Ping [1 ]
Lin, Tsung-Da [1 ]
Chang, Yao-Chung [1 ]
Hong, Mingwhei [1 ]
Kwo, J. Raynien [1 ,2 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：11 / +
页数：2
相关论文
共 3 条
[1]   Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy [J].
Hong, M ;
Passlack, M ;
Mannaerts, JP ;
Kwo, J ;
Chu, SNG ;
Moriya, N ;
Hou, SY ;
Fratello, VJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2297-2300
[2]   Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates [J].
Ren, F ;
Hong, MW ;
Hobson, WS ;
Kuo, JM ;
Lothian, JR ;
Mannaerts, JP ;
Kwo, J ;
Chen, YK ;
Cho, AY .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :943-945
[3]   Demonstration of enhancement-mode p- and m-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide [J].
Ren, F ;
Hong, M ;
Hobson, WS ;
Kuo, JM ;
Lothian, JR ;
Mannaerts, JP ;
Kwo, J ;
Chu, SNG ;
Chen, YK ;
Cho, AY .
SOLID-STATE ELECTRONICS, 1997, 41 (11) :1751-1753
1