A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact

被引：0

作者：

Lee, SeungGeun ^{[1
]}

Forman, Charles A. ^{[2
]}

Lee, Changmin ^{[2
]}

Kearns, Jared ^{[2
]}

Leonard, John T. ^{[2
]}

Cohen, Daniel A. ^{[2
]}

Speck, James S. ^{[2
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated a violet III-nitride vertical-cavity surface-emitting laser (VCSEL) with a GaN tunnel junction (TJ) contact grown by a metalorganic chemical vapor deposition (MOCVD) technique. A peak output power of 319 uW was achieved.

引用

页数：2

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