Site-Controlled Growth of Single InP QDs

被引：0
|
作者：
Vlasov, A. S. [1 ]
Mintairov, A. M. [1 ,2 ]
Kalyuzhnyy, N. A. [1 ]
Mintairov, S. A. [1 ]
Salii, R. A. [1 ]
Denisyuk, A. I. [3 ]
Babunts, R. A. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[2] Univ Notre Dame, Notre Dame, IN 46556 USA
[3] Natl Res Univ ITMO, St Petersburg 197101, Russia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 08期
关键词：
GaAs; Exposure Duration; GaAs Substrate; Metal Organic Vapor Phase Epitaxy; Effective Luminescence;
D O I：
10.1134/S1063782615080230
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate "defects" formed by a focused beam of Ga+ ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (mu m)(-2) can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.
引用
收藏
页码：1095 / 1098
页数：4
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